solid solution

Based on thermodynamic constants, the concentration limits of the initial zinc-containing salt and the range of pH values at which the depositions of ZnS and ZnSe without Zn(OH)2 are possible were calculated. The boundary conditions of the formation of the ZnSxSe1–x solid solution in the hydroxide-hydrazine-thiourea-selenium system were defined by the overlap area between the constructed ZnS and ZnSe formation zones. The task of complex intermolecular interaction between complexed zinc ions and two chalcogenizers in the working solution was solved on the basis of mathematical calculations.

Solid solutions films of mercury sulfide-selenide (HgS1–xSex) were synthesized on glass substrates by the chemical bath deposition method. Theoretical calculations of the boundary conditions for the HgS and HgSe formation in the mercury-tartrate-thiourea-selenosulfate system were made. The boundary conditions of HgS1–xSex were defined by the overlap area between the constructed HgS and HgSe formation zones. The X-ray diffraction and elemental analysis showed that the obtained films are single-phase and consist of HgS1–xSex substitutional solid solutions in zincblende modification.

Within crystalquasichemical formalism models of point defects of crystals in the Pb-Bi-Te system have been specified considering the amphoteric action of impurities in bismuth doped lead telluride PbTe:Bi, and solid solution formation mechanisms for РbТе-ВіТе and РbТе-Ві2Те3 have been examined. Dependences of Hall concentration and the concentration of point defects on the composition and the initial deviation from stoichiometry in the basic matrix have been calculated.